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IRF740ASPBF Fiches technique(PDF) 2 Page - Vishay Siliconix |
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IRF740ASPBF Fiches technique(HTML) 2 Page - Vishay Siliconix |
2 / 8 page www.vishay.com Document Number: 91052 2 S-Pending-Rev. A, 19-Jun-08 IRF740AS, IRF740AL, SiHF740AS, SiHF740AL Vishay Siliconix Note a. When mounted on 1" square PCB (FR-4 or G-10 material). Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS. d. Uses IRF740A/SiHF740A data and test conditions. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient (PCB Mounted, steady-state)a RthJA -40 °C/W Maximum Junction-to-Case (Drain) RthJC -1.0 SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 400 - - V VDS Temperature Coefficient ΔV DS/TJ Reference to 25 °C, ID = 1 mAd -0.48 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 30 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 400 V, VGS = 0 V - - 25 µA VDS = 320 V, VGS = 0 V, TJ = 125 °C - - 250 Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 6.0 Ab - - 0.55 Ω Forward Transconductance gfs VDS = 50 V, ID = 6.0 Ad 4.9 - - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5d - 1030 - pF Output Capacitance Coss - 170 - Reverse Transfer Capacitance Crss -7.7 - Output Capacitance Coss VGS = 0 V VDS = 1.0 V, f = 1.0 MHz - 1490 - VDS = 320 V, f = 1.0 MHz - 52 - Effective Output Capacitance Coss eff. VDS = 0 V to 400 Vc, d -61 - Total Gate Charge Qg VGS = 10 V ID = 10 A, VDS = 320 V, see fig. 6 and 13b, d -- 36 nC Gate-Source Charge Qgs -- 9.9 Gate-Drain Charge Qgd -- 16 Turn-On Delay Time td(on) VDD = 200 V, ID = 10 A, RG = 10 Ω, RD = 19.5 Ω, see fig. 10b, d -10 - ns Rise Time tr -35 - Turn-Off Delay Time td(off) -24 - Fall Time tf -22 - Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode -- 10 A Pulsed Diode Forward Currenta ISM -- 40 Body Diode Voltage VSD TJ = 25 °C, IS = 10 A, VGS = 0 Vb -- 2.0 V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 10 A, dI/dt = 100 A/µsb, d - 240 360 ns Body Diode Reverse Recovery Charge Qrr -1.9 2.9 µC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) S D G |
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