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IRF634NSTRRPBF Fiches technique(PDF) 2 Page - Vishay Siliconix

No de pièce IRF634NSTRRPBF
Description  Power MOSFET
Download  8 Pages
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Fabricant  VISHAY [Vishay Siliconix]
Site Internet  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

IRF634NSTRRPBF Fiches technique(HTML) 2 Page - Vishay Siliconix

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Document Number: 91033
2
S-Pending-Rev. A, 19-Jun-08
IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. Starting TJ = 25 °C, L = 9.5 mH, RG = 25 Ω, IAS = 4.8 A, VGS = 10 V.
c. 1.6 mm from case.
d. This is only applied to TO-220 package.
e. This is applied to D2PAK, when mounted 1" square PCB (FR-4 or G-10 material).
Notes
a. This is only applied to TO-220 package.
b. This is applied to D2PAK, when mounted 1" square PCB (FR-4 or G-10 material).
Maximum Power Dissipation
TC = 25 °C
PD
88
W
Maximum Power Dissipation (PCB Mount)e
TA = 25 °C
3.8
Peak Diode Recovery dV/dt
dV/dt
7.3
V/ns
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 175
°C
Soldering Recommendations (Peak Temperature)
for 10 s
300c
Mounting Torqued
6-32 or M3 screw
10
lbf · in
1.1
N · m
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
UNIT
Maximum Junction-to-Ambienta
RthJA
-62
°C/W
Maximum Junction-to-Ambient
(PCB Mount)b
RthJA
-40
Maximum Junction-to-Case (Drain)
RthJC
-1.7
Case-to-Sink, Flat, Greased Surfacea
RthCS
0.50
-
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
UNIT
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
250
-
-
V
VDS Temperature Coefficient
ΔV
DS/TJ
Reference to 25 °C, ID = 1 mA
-
0.33
-
V/°C
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
2.0
-
4.0
V
Gate-Source Leakage
IGSS
VGS = ± 20 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 250 V, VGS = 0 V
-
-
25
µA
VDS = 200 V, VGS = 0 V, TJ = 150 °C
-
-
250
Drain-Source On-State Resistance
RDS(on)
VGS = 10 V
ID = 4.8 Ab
-
-
0.435
Ω
Forward Transconductance
gfs
VDS = 50 V, ID = 4.8 Ab
5.4
-
-
S
Dynamic
Input Capacitance
Ciss
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
-
620
-
pF
Output Capacitance
Coss
-84
-
Reverse Transfer Capacitance
Crss
-23
-
Total Gate Charge
Qg
VGS = 10 V
ID = 4.8 A, VDS = 200 V,
see fig. 6 and 13b
--
34
nC
Gate-Source Charge
Qgs
--
6.5
Gate-Drain Charge
Qgd
--
16
Turn-On Delay Time
td(on)
VDD = 125 V, ID = 4.8 A,
RG = 1.3 Ω, see fig. 10b
-8.4
-
ns
Rise Time
tr
-16
-
Turn-Off Delay Time
td(off)
-28
-
Fall Time
tf
-15
-


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