STY15NA100 datasheet(3/4 Pages) STMICROELECTRONICS

No de pièce	STY15NA100

Description	N - CHANNEL 1000V - 0.65 ohm - 15A - Max247 MOSFET

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Fabricant	STMICROELECTRONICS [STMicroelectronics]

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3 / 4 page

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(on)

tr

Turn-on Time

Rise Time

VDD = 500 V

ID = 7.5 A

RG = 4.7

Ω

VGS = 10 V

40

55

ns

(di/dt)on

Turn-on Current Slope

VDD = 800 V

ID = 15 A

RG = 47

Ω

VGS = 10 V

260

A/

µs

Qg

Qgs

Qgd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD = 800 V

ID = 15 A

VGS = 10 V

470

45

150

320

nC

SWITCHING OFF

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

tr(Voff)

tf

tc

Off-voltage Rise Time

Fall Time

Cross-over Time

VDD = 800 V

ID = 15 A

RG = 4.7

Ω

VGS = 10 V

110

25

150

ns

SOURCE DRAIN DIODE

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ISD

ISDM(

•)

Source-drain Current

(pulsed)

15

60

A

VSD (

∗)

Forward On Voltage

ISD = 15 A

VGS = 0

2

V

trr

Qrr

IRRM

Reverse Recovery

Time

Reverse Recovery

Charge

Reverse Recovery

Current

ISD = 15 A

di/dt = 100 A/

µs

VDD = 100 V

Tj = 150

oC

1400

42

60

ns

µC

A

(

∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

(

•) Pulse width limited by safe operating area

STY15NA100

3/5

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Fabricant	No de pièce	Fiches technique	Description
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