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STY15NA100 Fiches technique(PDF) 3 Page - STMicroelectronics |
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STY15NA100 Fiches technique(HTML) 3 Page - STMicroelectronics |
3 / 4 page ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Time Rise Time VDD = 500 V ID = 7.5 A RG = 4.7 Ω VGS = 10 V 40 55 ns ns (di/dt)on Turn-on Current Slope VDD = 800 V ID = 15 A RG = 47 Ω VGS = 10 V 260 A/ µs Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 800 V ID = 15 A VGS = 10 V 470 45 150 320 nC nC nC SWITCHING OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time VDD = 800 V ID = 15 A RG = 4.7 Ω VGS = 10 V 110 25 150 ns ns ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM( •) Source-drain Current Source-drain Current (pulsed) 15 60 A A VSD ( ∗) Forward On Voltage ISD = 15 A VGS = 0 2 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 15 A di/dt = 100 A/ µs VDD = 100 V Tj = 150 oC 1400 42 60 ns µC A ( ∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ( •) Pulse width limited by safe operating area STY15NA100 3/5 |
Numéro de pièce similaire - STY15NA100 |
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Description similaire - STY15NA100 |
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