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1N1184 Fiches technique(PDF) 3 Page - Vishay Siliconix

No de pièce 1N1184
Description  Power Silicon Rectifier Diodes, 35 A/40 A/60 A
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Fabricant  VISHAY [Vishay Siliconix]
Site Internet  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

1N1184 Fiches technique(HTML) 3 Page - Vishay Siliconix

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Document Number: 93492
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
Revision: 24-Jun-08
3
1N1183, 1N3765, 1N1183A, 1N2128A Series
Power Silicon Rectifier Diodes,
35 A/40 A/60 A
Vishay High Power Products
Note
(1) JEDEC registered values
Fig. 1 - Maximum Allowable Case Temperature vs.
Average Forward Current, 1N1183 and 1N3765 Series
Fig. 2 - Typical Low Level Forward Power Loss vs.
Average Forward Current (Sinusoidal Current Waveform),
1N1183 and 1N3765 Series
Fig. 3 - Typical High Level Forward Power Loss vs.
Average Forward Current (Sinusoidal Current Waveform),
1N1183 and 1N3765 Series
Fig. 4 - Typical Forward Voltage vs. Forward Current,
1N1183 and 1N3765 Series
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
1N1183
1N3765
1N1183A
1N2128A
UNITS
Maximum operating
case temperature range
TC
- 65 to 190 (1)
- 65 to 200
°C
Maximum storage
temperature range
TStg
- 65 to 175 (1)
- 65 to 200
Maximum internal thermal
resistance, junction to case
RthJC
DC operation
1.00 (1)
1.1 (1)
0.65 (1)
°C/W
Thermal resistance,
case to sink
RthCS
Mounting surface, smooth, flat
and greased
0.25
Mounting torque
minimum
Non-lubricated threads
2.3 (20)
N · m
(lbf · in)
maximum
3.4 (30)
Approximate weight
17
g
0.6
oz.
Case style
JEDEC
DO-203AB (DO-5)


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