Moteur de recherche de fiches techniques de composants électroniques
  French  ▼
ALLDATASHEET.FR

X  

STQ1HNK60R-AP Fiches technique(PDF) 2 Page - STMicroelectronics

No de pièce STQ1HNK60R-AP
Description  N-CHANNEL 600V - 8廓 - 1A DPAK/TO-92/IPAK/SOT-223 SuperMESH MOSFET
Download  15 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STQ1HNK60R-AP Fiches technique(HTML) 2 Page - STMicroelectronics

  STQ1HNK60R-AP Datasheet HTML 1Page - STMicroelectronics STQ1HNK60R-AP Datasheet HTML 2Page - STMicroelectronics STQ1HNK60R-AP Datasheet HTML 3Page - STMicroelectronics STQ1HNK60R-AP Datasheet HTML 4Page - STMicroelectronics STQ1HNK60R-AP Datasheet HTML 5Page - STMicroelectronics STQ1HNK60R-AP Datasheet HTML 6Page - STMicroelectronics STQ1HNK60R-AP Datasheet HTML 7Page - STMicroelectronics STQ1HNK60R-AP Datasheet HTML 8Page - STMicroelectronics STQ1HNK60R-AP Datasheet HTML 9Page - STMicroelectronics Next Button
Zoom Inzoom in Zoom Outzoom out
 2 / 15 page
background image
STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60
2/15
Table 3: Absolute Maximum ratings
( ) Pulse width limited by safe operating area
(1) ISD ≤1.0A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
Table 4: Thermal Data
(#) When mounted on FR-4 board of 1 in2 , 2oz Cu, t < 10 sec
Table 5: Avalanche Characteristics
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 6: On/Off
Symbol
Parameter
Value
Unit
DPAK / IPAK
TO-92
SOT-223
VDS
Drain-source Voltage (VGS = 0)
600
V
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
600
V
VGS
Gate- source Voltage
± 30
V
ID
Drain Current (continuous) at TC = 25°C
1.0
0.4
0.4
A
ID
Drain Current (continuous) at TC = 100°C
0.63
0.25
0.25
A
IDM ( )
Drain Current (pulsed)
4
1.6
1.6
A
PTOT
Total Dissipation at TC = 25°C
30
3
3.3
W
Derating Factor
0.24
0.025
0.025
W/°C
dv/dt (1)
Peak Diode Recovery voltage slope
3
V/ns
Tj
Tstg
Operating Junction Temperature
Storage Temperature
-55 to 150
°C
DPAK/IPAK
TO-92
SOT-223
Unit
Rthj-case
Thermal Resistance Junction-case Max
4.16
--
--
°C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
100
120
37.87 (#)
°C/W
Rthj-lead
Thermal Resistance Junction-lead Max
--
40
--
°C/W
Tl
Maximum Lead Temperature For Soldering
Purpose
275
260
°C
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
1A
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
25
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 1mA, VGS = 0
600
V
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
50
µA
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30V
±100
nA
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
2.25
3
3.7
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 0.5 A
8
8.5


Numéro de pièce similaire - STQ1HNK60R-AP

FabricantNo de pièceFiches techniqueDescription
logo
STMicroelectronics
STQ1HNK60R-AP STMICROELECTRONICS-STQ1HNK60R-AP Datasheet
748Kb / 13P
   N-CHANNEL 600V - 8 - 1A DPAK / IPAK / TO-92 SuperMESH Power MOSFET
STQ1HNK60R-AP STMICROELECTRONICS-STQ1HNK60R-AP Datasheet
485Kb / 15P
   N-CHANNEL 600V - 8-ohm - 1A DPAK/TO-92/IPAK/SOT-223 SuperMESH-TM MOSFET
More results

Description similaire - STQ1HNK60R-AP

FabricantNo de pièceFiches techniqueDescription
logo
STMicroelectronics
STN1HNK60 STMICROELECTRONICS-STN1HNK60 Datasheet
485Kb / 15P
   N-CHANNEL 600V - 8-ohm - 1A DPAK/TO-92/IPAK/SOT-223 SuperMESH-TM MOSFET
STD1NK60 STMICROELECTRONICS-STD1NK60 Datasheet
748Kb / 13P
   N-CHANNEL 600V - 8 - 1A DPAK / IPAK / TO-92 SuperMESH Power MOSFET
STQ1NK80ZR-AP STMICROELECTRONICS-STQ1NK80ZR-AP Datasheet
630Kb / 15P
   N-CHANNEL 800V - 13 廓 - 1 A TO-92 /SOT-223/DPAK/IPAK Zener - Protected SuperMESH??MOSFET
logo
Microsemi Corporation
STD1LNK60Z-1 MICROSEMI-STD1LNK60Z-1_06 Datasheet
732Kb / 14P
   N-CHANNEL 600V 13 OHM 0.8A TO-92/IPAK/SOT-223 Zener-Protected SuperMESH MOSFET
logo
STMicroelectronics
STD1LNK60Z-1 STMICROELECTRONICS-STD1LNK60Z-1 Datasheet
657Kb / 14P
   N-CHANNEL 600V 13 OHM 0.8A TO-92/IPAK/SOT-223 Zener-Protected SuperMESH MOSFET
September 2005 Rev. 6
STD2HNK60Z STMICROELECTRONICS-STD2HNK60Z Datasheet
497Kb / 16P
   N-channel 600V - 4.4廓 - 2A - TO-92/TO-220FP/DPAK/IPAK Zener-protected SuperMESH??Power MOSFET
STQ1NK60ZR-AP STMICROELECTRONICS-STQ1NK60ZR-AP_07 Datasheet
466Kb / 16P
   N-channel 600V - 13廓 - 0.8A - TO-92 - TO-251 - SOT-223 Zener-Protected SuperMESH??Power MOSFET
STD2HNK60Z-1 STMICROELECTRONICS-STD2HNK60Z-1 Datasheet
405Kb / 12P
   N-CHANNEL 600V - 4.4廓 - 2.0A TO-92/TO-220FP/IPAK Zener-Protected SuperMESH MOSFET
STD3NK50Z STMICROELECTRONICS-STD3NK50Z Datasheet
481Kb / 14P
   N-CHANNEL 500V - 2.8ohm - 2.3A TO-92/DPAK/IPAK Zener-Protected SuperMESH MOSFET
STN3N45K3 STMICROELECTRONICS-STN3N45K3 Datasheet
487Kb / 12P
   N-channel 450 V, 3.2 廓, 1.8 A, TO-92, SOT-223, IPAK SuperMESH3??Power MOSFET
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15


Fiches technique Télécharger

Go To PDF Page


Lien URL




Politique de confidentialité
ALLDATASHEET.FR
ALLDATASHEET vous a-t-il été utile ?  [ DONATE ] 

À propos de Alldatasheet   |   Publicité   |   Contactez-nous   |   Politique de confidentialité   |   Echange de liens   |   Fabricants
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com