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STW45NM60 Fiches technique(PDF) 3 Page - STMicroelectronics

No de pièce STW45NM60
Description  N-CHANNEL 600V - 0.09ohm - 45A TO-247 MDmes TM Power MOSFET
Download  12 Pages
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STW45NM60 Fiches technique(HTML) 3 Page - STMicroelectronics

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STW45NM60
Electrical ratings
3/12
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VGS
Gate- source voltage
±30
V
ID
Drain current (continuous) at TC = 25°C
45
A
ID
Drain current (continuous) at TC = 100°C
28
A
IDM
(1)
1.
Pulse width limited by safe operating area
Drain current (pulsed)
180
A
PTOT
Total dissipation at TC = 25°C
417
W
Derating factor
3.33
W/°C
dv/dt (2)
2.
ISD < 45A, di/dt < 400A/µs, VDD < 80% V(BR)DSS
Peak diode recovery voltage slope
15
V/ns
Tstg
Storage temperature
–65 to 150
°C
Tj
Max. operating junction temperature
150
°C
Table 2.
Thermal data
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case
0.3
°C/W
Rthj-amb
Thermal resistance junction-amb
30
°C/W
Tl
Maximum lead temperature for soldering purpose
300
°C
Table 3.
Avalanche characteristics
Symbol
Parameter
Max value
Unit
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
15
A
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 35 V)
850
mJ


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