Moteur de recherche de fiches techniques de composants électroniques
  French  ▼

Delete All
ON OFF
ALLDATASHEET.FR

X  

Preview PDF Download HTML

STW45NM50 Fiches technique(PDF) 3 Page - STMicroelectronics

No de pièce STW45NM50
Description  N-CHANNEL 550V Tjmax - 0.08ohm - 45A TO-247 MDmesh TM MOSFET
Download  9 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STW45NM50 Fiches technique(HTML) 3 Page - STMicroelectronics

  STW45NM50 Datasheet HTML 1Page - STMicroelectronics STW45NM50 Datasheet HTML 2Page - STMicroelectronics STW45NM50 Datasheet HTML 3Page - STMicroelectronics STW45NM50 Datasheet HTML 4Page - STMicroelectronics STW45NM50 Datasheet HTML 5Page - STMicroelectronics STW45NM50 Datasheet HTML 6Page - STMicroelectronics STW45NM50 Datasheet HTML 7Page - STMicroelectronics STW45NM50 Datasheet HTML 8Page - STMicroelectronics STW45NM50 Datasheet HTML 9Page - STMicroelectronics  
Zoom Inzoom in Zoom Outzoom out
 3 / 9 page
background image
3/9
STW45NM50
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 7: Dynamic
Table 8: Source Drain Diode
(2)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(3)Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (2)
Forward Transconductance
VDS > ID(on) x RDS(on)max,ID = 22.5A
20
S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25V, f = 1 MHz, VGS = 0
3700
610
80
pF
pF
pF
Coss eq. (3)
Equivalent Output
Capacitance
VGS = 0V, VDS = 0V to 400V
325
pF
RG
Gate Input Resistance
f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
1.7
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 250V, ID = 24 A
RG =4.7Ω VGS = 10 V
(see Figure 14)
40
35
ns
ns
td(off)
tf
tc
Turn-off Delay Time
Fall Time
Cross-over Time
VDD = 400 V, ID = 45 A, RG = 4.7Ω,
VGS = 10 V
(see Figure 14)
18
23
44
ns
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 400V, ID = 45 A,
VGS = 10V
(see Figure 18)
87
23
42
117
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain Current
45
A
ISDM (3)
Source-drain Current (pulsed)
180
A
VSD (2)
Forward On Voltage
ISD = 45 A, VGS = 0
1.5
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 40 A, di/dt = 100A/µs,
VDD = 100 V, Tj = 25°C
(see Figure 16)
520
7.8
30
ns
µC
A
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 40 A, di/dt = 100A/µs,
VDD = 100 V, Tj = 150°C
(see Figure 16)
680
11.2
33
ns
µC
A


Html Pages

1  2  3  4  5  6  7  8  9 


Fiches technique Télécharger

Go To PDF Page


Lien URL




Politique de confidentialité
ALLDATASHEET.FR
ALLDATASHEET vous a-t-il été utile ?  [ DONATE ] 

À propos de Alldatasheet   |   Publicité   |   Contactez-nous   |   Politique de confidentialité   |   Echange de liens   |   Fabricants
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn