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STW26NM50 Fiches technique(PDF) 1 Page - STMicroelectronics |
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STW26NM50 Fiches technique(HTML) 1 Page - STMicroelectronics |
1 / 9 page 1/9 February 2005 STW26NM50 N-CHANNEL 500V - 0.10 Ω - 30A TO-247 MDmesh™ MOSFET Table 1: General Features s TYPICAL RDS(on) = 0.10 Ω s HIGH dv/dt AND AVALANCHE CAPABILITIES s IMPROVED ESD CAPABILITY s LOW INPUT CAPACITANCE AND GATE CHARGE DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain pro- cess with the Company’s PowerMESH™ horizon- tal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip tech- nique yields overall dynamic performance that is significantly better than that of similar competi- tion’s products. APPLICATIONS The MDmesh™ family is very suitable for increas- ing power density of high voltage converters allow- ing system miniaturization and higher efficiencies. Table 2: Order Codes Figure 1: Package Figure 2: Internal Schematic Diagram TYPE VDSS RDS(on) ID STW26NM50 500 V < 0.120 Ω 30 A TO-247 SALES TYPE MARKING PACKAGE PACKAGING STW26NM50 W26NM50 TO-247 TUBE Rev. 9 |
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