STU9NC80ZI datasheet(2/10 Pages) STMICROELECTRONICS

No de pièce	STU9NC80ZI

Description	N-CHANNEL 800V - 0.82ohm - 8.6A Max220/I-Max220 Zener-Protected PowerMESH?줚II MOSFET

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STU9NC80Z/STU9NC80ZI

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THERMAL DATA

AVALANCHE CHARACTERISTICS

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF

ON (1)

DYNAMIC

Max220

I-Max220

Rthj-case

Thermal Resistance Junction-case Max

0.78

2.27

°C/W

Rthj-amb

Thermal Resistance Junction-ambient Max

30

°C/W

Rthc-sink

Thermal Resistance Case-sink Typ

0.1

°C/W

Tl

Maximum Lead Temperature For Soldering Purpose

300

°C

Symbol

Parameter

Max Value

Unit

IAR

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max)

8.6

A

EAS

Single Pulse Avalanche Energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

400

mJ

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 250 µA, VGS = 0

800

V

∆BVDSS/∆TJ Breakdown Voltage Temp.

Coefficient

ID = 1 mA, VGS = 0

1

V/°C

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

1µA

VDS = Max Rating, TC = 125 °C

50

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ±20V

±10

µA

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250µA

34

5

V

RDS(on)

Static Drain-source On

Resistance

VGS = 10V, ID = 4.7A

0.82

0.9

Ω

ID(on)

On State Drain Current

VDS > ID(on) x RDS(on)max,

VGS =10V

8.6

A

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs

Forward Transconductance

VDS > ID(on) x RDS(on)max,

ID =4.7A

13

S

Ciss

Input Capacitance

VDS = 25V, f = 1 MHz, VGS = 0

3500

pF

Coss

Output Capacitance

230

pF

Crss

Reverse Transfer

Capacitance

25

pF

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Description similaire - STU9NC80ZI

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STU9NC80ZI Fiches technique(PDF) 2 Page - STMicroelectronics

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