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2SD1133 Fiches technique(PDF) 4 Page - Renesas Technology Corp

No de pièce 2SD1133
Description  Silicon NPN Triple Diffused
Download  6 Pages
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Fabricant  RENESAS [Renesas Technology Corp]
Site Internet  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SD1133 Fiches technique(HTML) 4 Page - Renesas Technology Corp

  2SD1133 Datasheet HTML 1Page - Renesas Technology Corp 2SD1133 Datasheet HTML 2Page - Renesas Technology Corp 2SD1133 Datasheet HTML 3Page - Renesas Technology Corp 2SD1133 Datasheet HTML 4Page - Renesas Technology Corp 2SD1133 Datasheet HTML 5Page - Renesas Technology Corp 2SD1133 Datasheet HTML 6Page - Renesas Technology Corp  
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2SD1133, 2SD1134
2
Electrical Characteristics (Ta = 25°C)
2SD1133
2SD1134
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
70
——70——V
I
C = 10 µA, IE = 0
Collector to emitter
breakdown voltage
V
(BR)CEO
50
——60——V
I
C = 50 mA, RBE = ∞
Emitter to base
breakdown voltage
V
(BR)EBO
5
——5
——V
I
E = 10 µA, IC = 0
Collector cutoff current
I
CBO
——
1
——
1
µAV
CB = 50 V, IE = 0
DC current transfer ratio
h
FE1*
1
60
320
60
320
V
CE = 4V
I
C = 1 A*
2
h
FE2
35
——35——
I
C = 0.1 A*
2
Collector to emitter
saturation voltage
V
CE(sat)
1—
1VI
C = 2 A, IB = 0.2 A*
2
Base to emitter voltage
V
BE
1—
1VV
CE = 4 V, IC = 1 A*
2
Gain bandwidth product
f
T
7
7
MHz
V
CE = 4 V, IC = 0.5 A*
2
Notes: 1. The 2SD1133 and 2SD1134 are grouped by h
FE1 as follows.
2. Pulse test.
BC
D
60 to 120
100 to 200
160 to 320
Maximum Collector Dissipation
Curve
60
40
20
0
50
100
150
Case temperature TC (°C)
2
5
1.0
0.5
0.2
0.1
0.05
2
15
50
10
20
100
Collector to emitter voltage VCE (V)
ICmax(Continuous)
Area of Safe Operation
(TC = 25°C)
(20 V, 2 A)
(50 V, 0.24 A)
(60 V, 0.15 A)
(10 V, 4 A)
DC
Operation
2SD1133
2SD1134


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