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2SJ479S Fiches technique(PDF) 5 Page - Renesas Technology Corp

No de pièce 2SJ479S
Description  Silicon P Channel MOS FET
Download  8 Pages
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Fabricant  RENESAS [Renesas Technology Corp]
Site Internet  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SJ479S Fiches technique(HTML) 5 Page - Renesas Technology Corp

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2SJ479(L), 2SJ479(S)
Rev.3.00 Jun 05, 2006 page 5 of 7
–50
0
–10
–20
–30
–40
0
Source to Drain Voltage
VSD
(V)
Reverse Drain Current vs.
Source to Drain Voltage
–0.4
–0.8
–1.2
–1.6
–2.0
Pulse Test
10 V
5 V
VGS = 0, 5 V
tr
td(on)
Vin
90%
90%
10%
10%
Vout
td(off)
90%
10%
tf
Switching Time Test Circuit
Waveform
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
0.3
0.1
0.03
0.01
10
µ
100
µ
1 m
10 m
100 m
1
10
Tc = 25°C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot
puls
e
PDM
PW
T
D =
PW
T
θch – c (t) = γ s (t) • θch – c
θch – c = 2.5°C/W, Tc = 25°C
Vin Monitor
D.U.T.
Vin
–10 V
RL
Vout
Monitor
50
VDD
= –10 V


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