2SK3378ENTL-E datasheet(4/7 Pages) RENESAS

No de pièce	2SK3378ENTL-E

Description	Silicon N Channel MOS FET High Speed Switching

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Fabricant	RENESAS [Renesas Technology Corp]

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4 / 7 page

2SK3378

REJ03G1599-0200 Rev.2.00 Oct 23, 2007

Page 4 of 6

10

8

6

4

2

–40

0

40

80

120

160

0

Pulse Test

ID = 100 m A

VGS = 4 V

10 V

Case Temperature TC (°C)

Static Drain to Source on State

Resistance vs. Temperature

Drain Current ID (A)

Forward Transfer Admittance

vs. Drain Current

10 mA

10 mA,50 mA,100 m A

50 mA

0.01

0.02

0.05

0.1

0.5

0.2

0.1

0.02

0.05

0.01

0.005

VDS = 10 V

Pulse Test

Tc = –25

°C

25

°C

75

°C

0.5

0.4

0.3

0.2

0.1

0

0.4

0.8

1.2

1.6

2.0

VGS = 0, –5V

5 V

Pulse Test

Drain to Source Voltage VDS (V)

Typical Capacitance vs.

Drain to Source Voltage

Drain Current ID (A)

Switching Characteristics

Source to Drain Voltage VSD (V)

Reverse Drain Current vs.

Source to Drain Voltage

10 V

010

20

30

40

50

10

1.0

0.1

0.2

0.5

2

5

Ciss

Coss

Crss

VGS = 0

f = 1 MHz

10000

1000

100

10

0.01

0.1

0.05

0.02

VGS = 10 V, VDD = 10 V

PW = 5

µs, duty ≤ 1 %

td(on)

tr

td(off)

tf

20

50

200

500

2000

5000

Numéro de pièce similaire - 2SK3378ENTL-E

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Hitachi Semiconductor	2SK3378	27Kb / 5P	Silicon N Channel MOS FET High Speed Switching

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2SK3378ENTL-E Fiches technique(PDF) 4 Page - Renesas Technology Corp

2SK3378ENTL-E Fiches technique(HTML) 4 Page - Renesas Technology Corp

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