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2SK3378ENTL-E Fiches technique(PDF) 4 Page - Renesas Technology Corp |
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2SK3378ENTL-E Fiches technique(HTML) 4 Page - Renesas Technology Corp |
4 / 7 page 2SK3378 REJ03G1599-0200 Rev.2.00 Oct 23, 2007 Page 4 of 6 10 8 6 4 2 –40 0 40 80 120 160 0 Pulse Test ID = 100 m A VGS = 4 V 10 V Case Temperature TC (°C) Static Drain to Source on State Resistance vs. Temperature Drain Current ID (A) Forward Transfer Admittance vs. Drain Current 10 mA 10 mA,50 mA,100 m A 50 mA 0.01 0.02 0.05 0.1 0.5 0.2 0.1 0.02 0.05 0.01 0.005 VDS = 10 V Pulse Test Tc = –25 °C 25 °C 75 °C 0.5 0.4 0.3 0.2 0.1 0 0.4 0.8 1.2 1.6 2.0 VGS = 0, –5V 5 V Pulse Test Drain to Source Voltage VDS (V) Typical Capacitance vs. Drain to Source Voltage Drain Current ID (A) Switching Characteristics Source to Drain Voltage VSD (V) Reverse Drain Current vs. Source to Drain Voltage 10 V 010 20 30 40 50 10 1.0 0.1 0.2 0.5 2 5 Ciss Coss Crss VGS = 0 f = 1 MHz 10000 1000 100 10 0.01 0.1 0.05 0.02 VGS = 10 V, VDD = 10 V PW = 5 µs, duty ≤ 1 % td(on) tr td(off) tf 20 50 200 500 2000 5000 |
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