Moteur de recherche de fiches techniques de composants électroniques |
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2SK2328 Fiches technique(PDF) 4 Page - Renesas Technology Corp |
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2SK2328 Fiches technique(HTML) 4 Page - Renesas Technology Corp |
4 / 7 page 2SK2328 Rev.2.00 Sep 07, 2005 page 4 of 6 5 40 160 Case Temperature TC (°C) 4 1 0 80 120 0 2 3 Static Drain to Source on State Resistance vs. Temperature –40 VGS = 10 V Pulse Test ID = 10 A 5 A 2 A 50 0.2 5 Drain Current ID (A) 10 1 0.5 2 5 2 0.1 1 Forward Transfer Admittance vs. Drain Current 20 VDS = 20 V –25 °C TC = 75°C 10 25 °C 0.5 Pulse Test 500 0.2 5 Reverse Drain Current IDR (A) 200 10 0.5 2 0.1 50 100 5 1 Body to Drain Diode Reverse Recovery Time di/dt = 100 A/ µs, V GS = 0 Ta = 25 °C 20 10 1,000 20 50 Drain to Source Voltage VDS (V) 10 30 40 Typical Capacitance vs. Drain to Source Voltage 0 100 VGS = 0 f = 1 MHz Crss Coss Ciss 5,000 5 10 1,000 40 100 Dynamic Input Characteristics 800 200 20 60 80 400 600 20 16 4 0 8 12 0 250 V 400 V VDD = 100 V VGS VDS VDD = 400 V 250 V 100 V ID = 8 A Gate Charge Qg (nc) 500 Drain Current ID (A) 200 5 50 100 10 Switching Characteristics td (off) 0.5 1 0.2 2 20 tf tr td (on) 20 VGS = 10 V, PW = 2 µs duty < 1%, VDD 30 V 5 = . . 10 |
Numéro de pièce similaire - 2SK2328 |
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Description similaire - 2SK2328 |
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