Moteur de recherche de fiches techniques de composants électroniques |
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2SK1971-E Fiches technique(PDF) 3 Page - Renesas Technology Corp |
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2SK1971-E Fiches technique(HTML) 3 Page - Renesas Technology Corp |
3 / 7 page 2SK1971 Rev.2.00 Sep 07, 2005 page 3 of 6 Main Characteristics Case Temperature TC (°C) Power vs. Temperature Derating Drain to Source Voltage VDS (V) Maximum Safe Operation Area Drain to Source Voltage VDS (V) Typical Output Characteristics Gate to Source Voltage VGS (V) Typical Transfer Characteristics Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain Current ID (A) Static Drain to Source on State Resistance vs. Drain Current 300 0 100 50 150 200 100 1000 30 3 0.1 130 100 300 0.3 3 10 300 1000 10 s µ 1 ms DC Operatio n (Tc = 25 °C) 100 s µ PW = 10 ms (1 Shot) Operation in this area is limited by R (on) DS 1 10 100 Ta = 25 °C 50 40 30 20 10 0 10 2030 4050 10 V Pulse Test 6 V 4.5 V V = 4 V GS 5.5 V 5 V 50 40 30 20 10 02 4 6 8 10 Pulse Test Tc = 25 °C –25 °C 75 °C V = 20 V DS 20 16 12 8 4 04 8 12 16 Pulse Test 20 A I = 10 A D 20 50 A 0.1 5 0.2 0.5 1 2 5 210 20 50 0.05 100 200 V = 10 V GS Pulse Test |
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Description similaire - 2SK1971-E |
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