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STS11NF3LL Fiches technique(PDF) 3 Page - STMicroelectronics |
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STS11NF3LL Fiches technique(HTML) 3 Page - STMicroelectronics |
3 / 6 page ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbo l Parameter Test Con ditions Min. Typ. Max. Unit td(on) tr Turn-on Delay T ime Rise Time VDD =15 V ID =5.5 A RG =4.7 Ω VGS =4.5 V (Resistive Load, see fig. 3) 47 60 ns ns Qg Q gs Qgd Tot al G ate Charge Gat e-Source Charge Gat e-Drain Charge VDD =24 V ID =11 A VGS =4.5 V 25 10 10 33 nC nC nC SWITCHING OFF Symbo l Parameter Test Con ditions Min. Typ. Max. Unit td(off) tf Turn-off Delay T ime Fall T ime VDD =24 V ID =5.5 A RG =4.7 Ω VGS =4.5 V (Resistive Load, see fig. 3) 34 24 ns ns SOURCE DRAIN DIODE Symbo l Parameter Test Con ditions Min. Typ. Max. Unit ISD ISDM ( •) Source-drain Current Source-drain Current (pulsed) 11 44 A A VSD ( ∗)Forward On Voltage ISD =11 A VGS =0 1. 5 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 11 A di/dt = 100 A/ µs VDD =15 V Tj =150 oC (Resistive Load, see fig. 5) 40 52 2.4 ns nC A ( ∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ( •) Pulse width limited by safe operating area STS11NF3LL 3/6 |
Numéro de pièce similaire - STS11NF3LL |
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Description similaire - STS11NF3LL |
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