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STQ1NE10L Fiches technique(PDF) 3 Page - STMicroelectronics |
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STQ1NE10L Fiches technique(HTML) 3 Page - STMicroelectronics |
3 / 9 page 3/9 STQ1NE10L Thermal Impedance Junction-lead SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE (*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. ( •)Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Time Rise Time VDD = 50 V ID = 0.5 A RG = 4.7 Ω VGS = 10 V (Resistive Load, Figure 3) 11 12 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD= 80 V ID= 1 A VGS= 5 V 7 1.5 3.5 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off Delay Time Fall Time VDD = 50 V ID = 0.5 A RG = 4.7Ω, VGS = 5 V (Resistive Load, Figure 3) 20 13 ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) 1 4 A A VSD (*) Forward On Voltage ISD = 1 A VGS = 0 1.5 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 1 A di/dt = 100A/µs VDD = 30 V Tj = 150°C (see test circuit, Figure 5) 52 90 3.5 ns nC A ELECTRICAL CHARACTERISTICS (continued) Safe Operating Area |
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