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STQ1NE10L Fiches technique(PDF) 1 Page - STMicroelectronics |
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STQ1NE10L Fiches technique(HTML) 1 Page - STMicroelectronics |
1 / 9 page 1/9 December 2002 . STQ1NE10L N-CHANNEL 100V - 0.3 Ω - 1A TO-92 STripFET™ POWER MOSFET s TYPICAL RDS(on) = 0.3 Ω s EXCEPTIONAL HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s AVALANCHE RUGGED TECHNOLOGY s LOW THRESHOLD DRIVE DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark- able manufacturing reproducibility. APPLICATIONS s DC MOTOR CONTROL (DISK DRIVES, etc.) s DC-DC & DC-AC CONVERTERS s SYNCHRONOUS RECTIFICATION TYPE VDSS RDS(on) ID STQ1NE10L 100 V <0.4 Ω 1 A TO-92 TO-92 (Ammopack) ABSOLUTE MAXIMUM RATINGS ( •) Pulse width limited by safe operating area. (1) Related to Rthj -l (2) ISD ≤1A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX (3) Starting Tj = 25 oC, ID = 1A, VDD = 50V Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 100 V VDGR Drain-gate Voltage (RGS = 20 kΩ) 100 V VGS Gate- source Voltage ± 16 V ID Drain Current (continuous) at TC = 25°C 1A ID Drain Current (continuous) at TC = 100°C 0.6 A IDM(•) Drain Current (pulsed) 4 A Ptot(1) Total Dissipation at TC = 25°C 3W Derating Factor 0.025 W/°C dv/dt (2) Peak Diode Recovery voltage slope 6 V/ns EAS (3) Single Pulse Avalanche Energy 400 mJ Tstg Storage Temperature -55 to 150 °C Tj Operating Junction Temperature °C INTERNAL SCHEMATIC DIAGRAM |
Numéro de pièce similaire - STQ1NE10L |
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Description similaire - STQ1NE10L |
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