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STQ1NC60R Fiches technique(PDF) 2 Page - STMicroelectronics |
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STQ1NC60R Fiches technique(HTML) 2 Page - STMicroelectronics |
2 / 9 page STQ1NC60R 2/9 ABSOLUTE MAXIMUM RATINGS ( ) Pulse width limited by safe operating area (1) ISD ≤0.3A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX. THERMAL DATA AVALANCHE CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF Symbol Parameter Value Unit VDS Drain-source Voltage (VGS =0) 600 V VDGR Drain-gate Voltage (RGS =20kΩ) 600 V VGS Gate- source Voltage ± 30 V ID Drain Current (continuous) at TC = 25°C 0.3 A ID Drain Current (continuous) at TC = 100°C 0.19 A IDM ( ) Drain Current (pulsed) 1.2 A PTOT Total Dissipation at TC = 25°C 3.1 W Derating Factor 0.025 W/°C dv/dt (1) Peak Diode Recovery voltage slope 3 V/ns Tj Tstg Operating Junction Temperature Storage Temperature -65 to 150 -65 to 150 °C °C TO-92 Rthj-amb Thermal Resistance Junction-ambient Max 120 °C/W Rthj-lead Thermal Resistance Junction-lead Max 40 °C/W Tl Maximum Lead Temperature For Soldering Purpose 260 °C Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 0.3 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID =IAR,VDD =50 V) 60 mJ Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 600 V IDSS Zero Gate Voltage Drain Current (VGS =0) VDS = Max Rating VDS = Max Rating, TC = 125 °C 1 50 µA µA IGSS Gate-body Leakage Current (VDS =0) VGS = ± 30V ±100 nA VGS(th) Gate Threshold Voltage VDS =VGS,ID = 250µA 234 V RDS(on) Static Drain-source On Resistance VGS =10V, ID = 0.3 A 12 15 Ω |
Numéro de pièce similaire - STQ1NC60R |
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Description similaire - STQ1NC60R |
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