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STQ1NC60R Fiches technique(PDF) 1 Page - STMicroelectronics

No de pièce STQ1NC60R
Description  N-CHANNEL 600V - 12ohm - 0.3A TO-92 PowerMESH?줚I Power MOSFET
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STQ1NC60R Fiches technique(HTML) 1 Page - STMicroelectronics

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July 2003
STQ1NC60R
N-CHANNEL 600V - 12
Ω -0.3A TO-92
PowerMESH™II Power MOSFET
s
TYPICAL RDS(on) = 12 Ω
s
EXTREMELY HIGH dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
NEW HIGH VOLTAGE BENCHMARK
s
GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY™II
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprietary edge termi-
nation structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
APPLICATIONS
s
LOW SWITCH MODE POWER SUPPLIES
(SMPS)
s
BATTERY CHARGER
ORDERING INFORMATION
TYPE
VDSS
RDS(on)
ID
STQ1NC60R
600 V
< 15
0.3 A
SALES TYPE
MARKING
PACKAGE
PACKAGING
STQ1NC60R
Q1NC60R
TO-92
BULK
STQ1NC60R-AP
Q1NC60R
TO-92
AMMOPACK
TO-92
TO-92
BULK
(AMMOPACK)
INTERNAL SCHEMATIC DIAGRAM


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