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STQ1NC60R Fiches technique(PDF) 1 Page - STMicroelectronics |
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STQ1NC60R Fiches technique(HTML) 1 Page - STMicroelectronics |
1 / 9 page 1/9 July 2003 STQ1NC60R N-CHANNEL 600V - 12 Ω -0.3A TO-92 PowerMESH™II Power MOSFET s TYPICAL RDS(on) = 12 Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s NEW HIGH VOLTAGE BENCHMARK s GATE CHARGE MINIMIZED DESCRIPTION Using the latest high voltage MESH OVERLAY™II process, STMicroelectronics has designed an ad- vanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termi- nation structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteris- tics. APPLICATIONS s LOW SWITCH MODE POWER SUPPLIES (SMPS) s BATTERY CHARGER ORDERING INFORMATION TYPE VDSS RDS(on) ID STQ1NC60R 600 V < 15 Ω 0.3 A SALES TYPE MARKING PACKAGE PACKAGING STQ1NC60R Q1NC60R TO-92 BULK STQ1NC60R-AP Q1NC60R TO-92 AMMOPACK TO-92 TO-92 BULK (AMMOPACK) INTERNAL SCHEMATIC DIAGRAM |
Numéro de pièce similaire - STQ1NC60R |
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Description similaire - STQ1NC60R |
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