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2SK1859-E Fiches technique(PDF) 4 Page - Renesas Technology Corp |
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2SK1859-E Fiches technique(HTML) 4 Page - Renesas Technology Corp |
4 / 7 page 2SK1859 Rev.2.00 Sep 07, 2005 page 4 of 6 10 40 160 Case Temperature TC (°C) 8 2 0 80 120 0 4 6 Static Drain to Source on State Resistance vs. Temperature –40 ID = 5 A VGS = 10 V Pulse Test 1 A 2 A 10 5 Drain Current ID (A) Forward Transfer Admittance vs. Drain Current 0.05 0.1 0.2 0.5 1 2 5 2 1 0.5 0.2 0.1 VDS = 20 V Pulse Test –25 °C TC = 25°C 75 °C 5,000 10 Reverse Drain Current IDR (A) Body to Drain Diode Reverse Recovery Time 0.1 2,000 1,000 500 200 100 50 0.2 0.5 1 2 5 di/dt = 100 A/ µs, Ta = 25°C VGS = 0 Pulse Test 10,000 20 50 Drain to Source Voltage VDS (V) 10 30 40 Typical Capacitance vs. Drain to Source Voltage 0 1,000 100 10 Crss Coss Ciss VGS = 0 f = 1 MHz 1,000 40 100 Gate Charge Qg (nc) Dynamic Input Characteristics 800 200 20 60 80 0 400 600 20 16 4 0 8 12 VDD = 250 V 400 V 600 V ID = 6 A VDS VGS 600 V 400 V VDD = 250 V 500 10 Drain Current ID (A) 0.1 Switching Characteristics 200 100 50 20 10 5 0.2 0.5 1 2 5 VGS = 10 V, VDD 30 V PW = 2 µs, duty < 1% = . . td (off) tf td (on) tr |
Numéro de pièce similaire - 2SK1859-E |
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Description similaire - 2SK1859-E |
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