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2SK1808 Fiches technique(PDF) 4 Page - Renesas Technology Corp |
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2SK1808 Fiches technique(HTML) 4 Page - Renesas Technology Corp |
4 / 7 page 2SK1808 Rev.2.00 Sep 07, 2005 page 4 of 6 10 40 160 Case Temperature TC (°C) 8 2 080 120 0 4 6 Static Drain to Source on State Resistance vs. Temperature ID = 5 A VGS = 10 V Pulse Test 1 A –40 2 A 10 0.2 5 Drain Current ID (A) 5 0.5 0.1 0.5 2 0.1 1 2 Forward Transfer Admittance vs. Drain Current Tc = 25 °C VDS = 20 V Pulse Test 0.05 0.2 1 –25 °C 75 °C 5,000 0.5 10 Reverse Drain Current IDR (A) 2,000 200 0.2 1 5 50 500 1,000 Body to Drain Diode Reverse Recovery Time di/dt = 100 A/ µs, Ta = 25°C VGS = 0 Pulse Test 0.1 100 2 10,000 20 50 Drain to Source Voltage VDS (V) 1,000 100 10 30 40 10 Typical Capacitance vs. Drain to Source Voltage 0 Crss Coss Ciss VGS = 0 f = 1 MHz 1,000 40 100 Gate Charge Qg (nc) Dynamic Input Characteristics 800 200 20 60 80 0 400 600 VDS 400 V 16 4 0 8 12 VDD = 250 V 400 V 600 V ID = 5 A 600 V VDD = 250 V VGS 20 500 0.5 10 Drain Current ID (A) 200 20 0.2 1 5 5 50 100 0.1 10 2 Switching Characteristics tf td (on) tr VGS = 10 V VDD = 30 V PW = 2 µs, duty < 1% td (off) • • |
Numéro de pièce similaire - 2SK1808 |
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Description similaire - 2SK1808 |
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