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2SK1775 Fiches technique(PDF) 4 Page - Renesas Technology Corp |
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2SK1775 Fiches technique(HTML) 4 Page - Renesas Technology Corp |
4 / 7 page 2SK1775 Rev.2.00 Sep 07, 2005 page 4 of 6 5 40 160 Case Temperature TC (°C) 4 1 0 80 120 0 2 3 Static Drain to Source on State Resistance vs. Temperature ID = 10 A VGS = 10 V Pulse Test –40 2 A 5 A 5 0.05 2 Drain Current ID (A) 2 0.2 0.1 0.5 0.5 1 Forward Transfer Admittance vs. Drain Current VDS = 20 V Pulse Test 0.1 0.2 1 75 °C –25 °C TC = 25°C 10 5 5,000 0.2 5 Reverse Drain Current IDR (A) 2,000 200 1 50 500 1,000 Body to Drain Diode Reverse Recovery Time di/dt = 100 A/ µs, Ta = 25 °C, V GS = 0 Pulse Test 100 0.5 2 0.1 10 10,000 20 50 Drain to Source Voltage VDS (V) 100 10 30 40 Typical Capacitance vs. Drain to Source Voltage 0 10 Crss Coss Ciss VGS = 0 f = 1 MHz 1,000 1,000 40 100 Gate Charge Qg (nc) 800 20 60 080 600 400 200 VDD = 600 V VDS Dynamic Input Characteristics 400 V VGS 20 16 12 8 4 0 0 ID = 8 A 250 V VDD = 250 V 400 V 600 V 0.5 10 Drain Current ID (A) 500 50 0.2 1 5 10 100 200 0.1 20 2 Switching Characteristics tf td (off) tr 5 td (on) VGS = 10 V, VDD 30 V PW = 5 µs, duty < 1% = . . |
Numéro de pièce similaire - 2SK1775 |
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Description similaire - 2SK1775 |
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