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2SK1318 Fiches technique(PDF) 2 Page - Renesas Technology Corp |
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2SK1318 Fiches technique(HTML) 2 Page - Renesas Technology Corp |
2 / 7 page 2SK1318 Rev.2.00 Sep 07, 2005 page 2 of 6 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 120 V Gate to source voltage VGSS ±20 V Drain current ID 20 A Drain peak current ID (peak) *1 80 A Body to drain diode reverse drain current IDR 20 A Channel dissipation Pch *2 35 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 120 — — V ID = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 Zero gate voltage drain current IDSS — — 250 µA VDS = 100 V, VGS = 0 Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V ID = 1 mA, VDS = 10 V — 0.095 0.12 Ω ID = 10 A, VGS = 10 V* 3 Static drain to source on state resistance RDS(on) — 0.11 0.16 Ω ID = 10 A, VGS = 4 V* 3 Forward transfer admittance |yfs| 10 17 — S ID = 10 A, VDS = 10 V* 3 Input capacitance Ciss — 1300 — pF Output capacitance Coss — 430 — pF Reverse transfer capacitance Crss — 60 — pF VDS = 10 V, VGS = 0, f = 1 MHz Turn-on delay time td (on) — 14 — ns Rise time tr — 70 — ns Turn-off delay time td (off) — 210 — ns Fall time tf — 90 — ns ID = 10 A, VGS = 10 V, RL = 3 Ω Body to drain diode forward voltage VDF — 1.4 — V IF = 20 A, VGS = 0 Body to drain diode reverse recovery time trr — 280 — ns IF = 20 A, VGS = 0, diF / dt = 50 A / µs Note: 3. Pulse test |
Numéro de pièce similaire - 2SK1318 |
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Description similaire - 2SK1318 |
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