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2SK1169-E Fiches technique(PDF) 4 Page - Renesas Technology Corp |
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2SK1169-E Fiches technique(HTML) 4 Page - Renesas Technology Corp |
4 / 7 page 2SK1169, 2SK1170 Rev.2.00 Sep 07, 2005 page 4 of 6 1.0 0.8 0.6 0.4 0.2 0 0 40 80 120 160 Case Temperature TC (°C) –40 Static Drain to Source on State Resistance vs. Temperature VGS = 10 V Pulse Test 10 A ID = 20 A 5 A Forward Transfer Admittance vs. Drain Current 50 20 10 5 0.5 0.2 0.5 1.0 5 10 20 Drain Current ID (A) 1.0 2 2 75 °C TC = 25°C VDS = 20 V Pulse Test –25 °C Body to Drain Diode Reverse Recovery Time di/dt = 100 A/ µs, Ta = 25°C VGS = 0 Pulse Test Reverse Drain Current IDR (A) 5,000 2,000 500 200 100 50 1,000 0.5 1.0 2 5 10 20 50 Typical Capacitance vs. Drain to Source Voltage 100 010 20 30 40 50 Drain to Source Voltage VDS (V) Coss Ciss Crss 10 VGS = 0 f = 1 MHz 1,000 10,000 Dynamic Input Characteristics 500 400 300 200 100 0 40 80 120 160 200 Gate Charge Qg (nc) 20 16 12 8 4 0 VDD = 100 V V DD = 400 V 250 V 250 V VDS ID = 20 A 400 V VGS 100 V Switching Characteristics 500 100 50 20 10 5 200 0.5 1.0 2 5 10 20 50 Drain Current ID (A) VGS = 10 V VDD = 30 V PW = 2 µs, duty < 1% td (off) tr tf td (on) • • |
Numéro de pièce similaire - 2SK1169-E |
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Description similaire - 2SK1169-E |
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