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2SJ551STL-E Fiches technique(PDF) 4 Page - Renesas Technology Corp

No de pièce 2SJ551STL-E
Description  Silicon P Channel MOS FET
Download  9 Pages
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Fabricant  RENESAS [Renesas Technology Corp]
Site Internet  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SJ551STL-E Fiches technique(HTML) 4 Page - Renesas Technology Corp

  2SJ551STL-E Datasheet HTML 1Page - Renesas Technology Corp 2SJ551STL-E Datasheet HTML 2Page - Renesas Technology Corp 2SJ551STL-E Datasheet HTML 3Page - Renesas Technology Corp 2SJ551STL-E Datasheet HTML 4Page - Renesas Technology Corp 2SJ551STL-E Datasheet HTML 5Page - Renesas Technology Corp 2SJ551STL-E Datasheet HTML 6Page - Renesas Technology Corp 2SJ551STL-E Datasheet HTML 7Page - Renesas Technology Corp 2SJ551STL-E Datasheet HTML 8Page - Renesas Technology Corp 2SJ551STL-E Datasheet HTML 9Page - Renesas Technology Corp  
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2SJ551(L), 2SJ551(S)
Rev.4.00 Sep 07, 2005 page 4 of 8
0.30
–40
0
40
80
120
160
Case Temperature
Tc (°C)
0
0.10
0.05
0.15
0.20
0.25
Static Drain to Source on State Resistance
vs. Temperature
Pulse Test
ID = –20 A
ID = –18 A
Forward Transfer Admittance vs.
Drain Current
Drain Current ID (A)
100
30
3
10
0.3
1
0.1
–0.1
–0.3
–1
–3
–30
–10
–100
Tc = –25°C
75°C
VDS = –10 V
Pulse Test
25°C
Reverse Drain Current
IDR (A)
Body-Drain Diode Reverse
Recovery Time
–0.1 –0.2
–0.5 –1
–2
–5
–20
–10
100
50
20
10
di / dt = 50 A /
µs
VGS = 0, Ta = 25°C
0
–10
–20
–30
–40
–50
Drain to Source Voltage VDS (V)
Typical Capacitance vs.
Drain to Source Voltage
10000
1000
3000
300
30
100
10
Ciss
Coss
Crss
VGS = 0
f = 1 MHz
0
0
Gate Charge
Qg (nc)
0
–20
–16
–12
–8
–4
–100
–80
–60
–40
–20
Dynamic Input Characteristics
16
32
48
64
80
VDS
VGS
1000
200
500
100
20
50
10
–0.2
–0.5 –1
–5
–2
–20
–10
–0.1
tf
tr
td(off)
td(on)
Drain Current
ID (A)
Switching Characteristics
VDD = –10 V
–25 V
–50 V
VDD = –50 V
–25 V
–10 V
–10 V
VGS = –4 V
–5 A, –10 A
–5 A, –10 A, –20 A
VGS = –10 V, VDD = –30 V
PW = 5
µs, duty ≤ 1 %


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