STB23NM60ND datasheet(4/15 Pages) STMICROELECTRONICS

No de pièce	STB23NM60ND

Description	N-channel 600 V - 0.150 廓 - 20 A - D2/I2PAK - TO-220/FP - TO-247 FDmesh??II Power MOSFET

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Electrical characteristics

STB23NM60ND-STF/I23NM60ND-STP23NM60ND-STW23NM60ND

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2

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 5.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 1 mA, VGS= 0

600

V

dv/dt(1)

1.

Characteristic value at turn off on inductive load

Drain-source voltage slope

VDD = 480 V,ID = 20 A,

VGS = 10 V

30

V/ns

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = Max rating,

VDS = Max rating,@125 °C

1

100

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±20 V

100

nA

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250 µA

34

5

V

RDS(on)

Static drain-source on

resistance

VGS= 10 V, ID= 10 A

0.150

0.180

Ω

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

1.

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward transconductance

VDS =15 V, ID= 10 A

17

S

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 50 V, f =1 MHz,

VGS = 0

2050

140

8

pF

Coss eq.

(2)

2.

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

Equivalent output

capacitance

VGS = 0, VDS = 0 to 480 V

260

pF

Rg

Gate input resistance

f=1 MHz Gate DC Bias=0

Test signal level=20 mV

open drain

4

Ω

Qg

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 480 V, ID = 20 A

VGS = 10 V

(see Figure 3)

60

10

30

nC

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