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STB20NM50FD Fiches technique(PDF) 4 Page - STMicroelectronics |
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STB20NM50FD Fiches technique(HTML) 4 Page - STMicroelectronics |
4 / 16 page Electrical characteristics STB20NM50FD - STF20NM50FD - STP20NM50FD 4/16 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 5. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 250 µA, VGS= 0 500 V IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating, VDS = Max rating,@125 °C 1 10 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ± 30 V ± 100 nA VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA 34 5 V RDS(on) Static drain-source on resistance VGS= 10 V, ID= 10 A 0.22 0.25 Ω Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit gfs (1) 1. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Forward transconductance VDS > ID(on) x RDS(on)max, ID= 10 A 9S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25V, f =1 MHz, VGS = 0 1380 290 40 pF pF pF Coss eq. (2) 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Equivalent output capacitance VGS = 0, VDS = 0 to 400 V 130 pF Rg Gate input resistance f=1 MHz Gate DC Bias=0 Test signal level=20 mV open drain 2.8 Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 400 V, ID = 20 A VGS = 10 V (see Figure 16) 38 18 10 53 nC nC nC |
Numéro de pièce similaire - STB20NM50FD_08 |
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Description similaire - STB20NM50FD_08 |
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