2SC1907TZ-E datasheet(4/6 Pages) RENESAS

No de pièce	2SC1907TZ-E

Description	Silicon NPN Epitaxial Planar

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Fabricant	RENESAS [Renesas Technology Corp]

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4 / 6 page

2SC1907

Rev.2.00 Aug 10, 2005 page 4 of 5

–60

–50

–40

–30

–20

–10

0

510

015

Input Conductance gib (mS)

Input Admittance Characteristics

20

25

30

VCB = 10 V

Output end short

yib = gib+jbib

I

C = 5 mA

1,200 MHz

1,000

600

10

mA

15

mA

400

900

800

–6

–5

–4

–3

–2

–1

0

–1.0

–0.8

–1.2

–0.6

Reverse Transfer Conductance grb (mS)

Reverse Transfer Admittance

Characteristics

–0.4

–0.2

0

VCB = 10 V

Input end short

yrb = grb+jbrb

400 MHz

600

800

900

1,000

1,200

0

10

20

30

40

50

60

–20

–10

–30

0

Forward Transfer Conductance gfb (mS)

Forward Transfer Admittance

Characteristics

10

20

30

VCB = 10 V

Output end short

yfb = gfb+jbfb

400 MHz

600

800

900

1,000

1,200

10

mA

5 mA

0

10

5

15

1.5

3.0

Output Conductance gob (mS)

Output Admittance Characteristics

4.5

6.0

7.5

VCB = 10 V

Input end short

yob = gob+jbob

400 MHz

600

800

900

1,000

1,200

Numéro de pièce similaire - 2SC1907TZ-E

Fabricant	No de pièce	Fiches technique	Description
Hitachi Semiconductor	2SC1907	39Kb / 7P	Silicon NPN Epitaxial Planar
Inchange Semiconductor ...	2SC1907	158Kb / 4P	isc Silicon NPN RF Transistor

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Description similaire - 2SC1907TZ-E

Fabricant	No de pièce	Fiches technique	Description
Hitachi Semiconductor	2SC1907	39Kb / 7P	Silicon NPN Epitaxial Planar
	2SC2776	24Kb / 5P	Silicon NPN Epitaxial Planar
	2SC460	51Kb / 13P	Silicon NPN Epitaxial Planar
Renesas Technology Corp	2SC5852	88Kb / 6P	Silicon NPN Epitaxial Planar
Guangdong Kexin Industr...	2SC3930	45Kb / 1P	Silicon NPN Epitaxial Planar
Hitachi Semiconductor	2SC1906	45Kb / 8P	Silicon NPN Epitaxial Planar
	2SC2620	24Kb / 5P	Silicon NPN Epitaxial Planar
	2SC3391	24Kb / 5P	Silicon NPN Epitaxial Planar
	2SC4693	30Kb / 6P	Silicon NPN Epitaxial Planar
List of Unclassifed Man...	2SC1377	160Kb / 3P	SILICON NPN EPITAXIAL PLANAR

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