2SC1906TZ-E datasheet(2/7 Pages) RENESAS

No de pièce	2SC1906TZ-E

Description	Silicon NPN Epitaxial Planar

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Fabricant	RENESAS [Renesas Technology Corp]

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2 / 7 page

2SC1906

Rev.2.00 Aug 10, 2005 page 2 of 6

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to base breakdown voltage

V(BR)CBO

30

—

V

IC = 10

µA, IE = 0

Collector to emitter breakdown voltage

V(BR)CEO

19

—

V

IC = 3 mA, RBE =

∞

Emitter to base breakdown voltage

V(BR)EBO

2

—

V

IE = 10

µA, IC = 0

Collector cutoff current

ICBO

—

0.5

µA

VCB = 10 V, IE = 0

DC current transfer ratio

hFE

40

—

VCE = 10 V, IC = 10 mA

Gain bandwidth product

fT

600

1000

—

MHz

VCE = 10 V, IC = 10 mA

Collector output capacitance

Cob

—

1.0

2.0

pF

VCB = 10 V, IE = 0, f = 1 MHz

Collector to emitter saturation voltage

VCE(sat)

—

0.2

1.0

V

IC = 20 mA, IB = 4 mA

Base time constant

rbb’ • CC

—

10

25

ps

VCB = 10 V, IC = 10 mA,

f = 31.8 MHz

Power gain

PG

—

33

—

dB

VCE = 10 V,

IC = 5 mA

f = 45 MHz

—

18

—

dB

VCE = 10 V,

IC = 5 mA

f = 200 MHz

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