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STPS41H100 Fiches technique(PDF) 2 Page - STMicroelectronics |
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STPS41H100 Fiches technique(HTML) 2 Page - STMicroelectronics |
2 / 6 page STPS41H100CG/CT/CR 2/6 Symbol Parameter Tests Conditions Min. Typ. Max. Unit IR * Reverse leakage current Tj = 25°C VR =VRRM 10 µA Tj = 125°C 310 mA VF * Forward voltage drop Tj = 25 °CIF =20 A 0.80 V Tj = 125°C IF =20 A 0.62 0.67 Tj=25 °CIF =40 A 0.90 Tj = 125°C IF =40 A 0.70 0.76 Pulse test : * tp = 380 µs, δ <2% To evaluate the conduction losses use the following equation : P=0.58xIF(AV) + 0.0045 IF 2 (RMS) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter Value Unit Rth(j-c) Junction to case Per diode Total 1.5 0.8 °C/W Rth(c) Coupling 0.1 When the diodes 1 and 2 are used simultaneously : ∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) THERMAL RESISTANCES 0 2 4 6 8 10 12 14 16 0 5 10 15 20 25 IF(av)(A) δ = 0.05 δ = 0.1 δ = 0.2 δ = 0.5 δ = 1 PF(av)(W) T δ=tp/T tp Fig. 1: Conduction losses versus average current. 0 2 4 6 8 10 12 14 16 18 20 22 0 25 50 75 100 125 150 175 Tamb(°C) Rth(j-a)=Rth(j-c) Rth(j-a)=50°C/W IF(av)(A) T δ=tp/T tp Fig. 2: Average forward current versus ambient temperature ( δ = 0.5). |
Numéro de pièce similaire - STPS41H100 |
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Description similaire - STPS41H100 |
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