STPS40L15 datasheet(3/5 Pages) STMICROELECTRONICS

No de pièce	STPS40L15

Description	LOW DROP OR-ing POWER SCHOTTKY DIODE

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Fabricant	STMICROELECTRONICS [STMicroelectronics]

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1.0E-4

1.0E-3

1.0E-2

1.0E-1

1.0E+0

0.0

0.2

0.4

0.6

0.8

1.0

tp (s)

Zth(j-c)/Rth(j-c)

T

δ=tp/T

tp

Single pulse

δ = 0.5

δ = 0.2

δ = 0.1

Fig. 4: Relative variation of thermal impedance

junction to case versus pulse duration (per diode).

02468

10

12

14

16

1E-1

1E+0

1E+1

1E+2

5E+2

IR(mA)

Tj=100°C

Tj=25°C

VR(V)

Fig. 5: Reverse leakage current versus reverse

voltage applied (typical values per diode).

12

5

10

20

0.1

1.0

5.0

VR(V)

C(nF)

F=1MHz

Tj=25°C

Fig. 6: Junction capacitance versus reverse

voltage applied (typical values per diode).

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

0.1

1.0

10.0

100.0

200.0

VFM(V)

IFM(A)

Tj=150°C

Tj=25°C

Tj=125°C

Tj=75°C

Fig. 7: Forward voltage drop versus forward

current (typical values per diode).

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

1

10

100

200

IFM(A)

Tj=100°C

VFM(V)

Fig. 8: Forward voltage drop versus forward

current (typical maximum per diode).

1E-3

1E-2

1E-1

1E+0

0

50

100

150

200

250

t(s)

IM(A)

Tc=50°C

Tc=75°C

Tc=110°C

IM

t

δ=0.5

Fig. 3: Non repetitive surge peak forward current

versus overload duration (maximum values per

diode).

STPS40L15CW/CT

3/5

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STMicroelectronics	STPS40L15C	112Kb / 8P	Low drop OR-ing power Schottky diode July 2011 Rev 6
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