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ST1S09IPU Fiches technique(PDF) 7 Page - STMicroelectronics

No de pièce ST1S09IPU
Description  2 A, 1.5 MHz PWM step-down switching regulator with synchronous rectificationtm
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

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ST1S09
Electrical characteristics
7/18
Note:
1
Guaranteed by design, but not tested in production.
Table 7.
Electrical characteristics for ST1S09IPU Refer to Figure 22 application circuit
VIN_SW = VIN_A = VINH = 5 V, VO = 1.2 V, C1 = 4.7 µF, C2 = 22 µF, L1 = 2.7 µH,
TJ = -30 to 125 °C (unless otherwise specified. Typical values are referred to 25 °C)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
FB
Feedback voltage
784
800
816
mV
IFB
VFB pin bias current
600
nA
VI
Minimum input voltage
IO = 10mA to 2A
2.7
V
OVP
Over voltage protection
threshold
VO rising
1.05 VO 1.1 VO
V
Over voltage protection
hysteresis
VO falling
5
%
IQ
Quiescent current
VINH > 1.2V, not switching
1.5
2.5
mA
VINH < 0.4V, T = - 30°C to 85°C
1
µA
IO
Output current
VI = 2.7 to 5.5V Note 1
2A
VINH
Inhibit threshold
Device ON, VI = 2.7 to 5.5V
1.3
V
Device ON, VI = 2.7 to 5V
1.2
Device OFF
0.4
IINH
Inhibit pin current
2µA
%VO/ΔVI
Output line regulation
VI = 2.7V to 5.5V, IO = 100mA
Note 1
0.16
%VO/
ΔVI
%VO/ΔIO
Output load regulation
IO = 10mA to 2A Note 1
0.2
0.6
%VO/
ΔIO
PWMfS
PWM switching frequency
VFB = 0.65V
1.2
1.5
1.8
MHz
DMAX
Maximum duty cycle
80
87
%
RDSON-N NMOS switch on resistance
ISW = 750 mA
0.1
Ω
RDSON-P PMOS switch on resistance
ISW = 750 mA
0.1
Ω
ISWL
Switching current limitation
Note 1
2.5
2.9
3.5
A
ν
Efficiency Note 1
IO = 10mA to 100mA, VO = 3.3V
65
%
IO = 100mA to 2A, VO = 3.3V
82
87
TSHDN
Thermal shutdown
150
°C
THYS
Thermal shutdown hysteresis
20
°C
%VO/ΔIO
Load transient response
IO = 100mA to 1A, TA = 25°C
tR = tF ≥ 200ns, Note 1
-10
+10
%VO
%VO/ΔIO
Short circuit removal response
IO = 10mA to IO = short,
TA = 25°C Note 1
-10
+10
%VO


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