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FQA10N80C_F109 Datasheet(Fiches technique) 1 Page - Fairchild Semiconductor

Numéro de pièce FQA10N80C_F109
Description  800V N-Channel MOSFET
Télécharger  8 Pages
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Fabricant  FAIRCHILD [Fairchild Semiconductor]
Site Internet  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FQA10N80C_F109 Datasheet(HTML) 1 Page - Fairchild Semiconductor

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©2007 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FQA10N80C_F109 Rev. A
August 2007
QFET
®
FQA10N80C_F109
800V N-Channel MOSFET
Features
• 10A, 800V, RDS(on) = 1.1Ω @VGS = 10 V
• Low gate charge ( typical 44 nC)
• Low Crss ( typical 15pF)
•Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.
Absolute Maximum Ratings
Thermal Characteristics
D
G
S
GS
D
TO-3PN
FQA Series
Symbol
Parameter
FQA10N80C_F109
Units
VDSS
Drain-Source Voltage
800
V
ID
Drain Current
- Continuous (TC = 25°C)
10
A
- Continuous (TC = 100°C)
6.32
A
IDM
Drain Current
- Pulsed
(Note 1)
40
A
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
920
mJ
IAR
Avalanche Current
(Note 1)
10
A
EAR
Repetitive Avalanche Energy
(Note 1)
24
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.0
V/ns
PD
Power Dissipation (TC = 25°C)
240
W
- Derate above 25°C
1.92
W/°C
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
°C
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C
Symbol
Parameter
Typ
Max
Units
RθJC
Thermal Resistance, Junction-to-Case
--
0.52
°C/W
RθCS
Thermal Resistance, Case-to-Sink
0.24
--
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
--
40
°C/W


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