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FQA10N80C_F109 Datasheet(Fiches technique) 3 Page - Fairchild Semiconductor

Numéro de pièce FQA10N80C_F109
Description  800V N-Channel MOSFET
Télécharger  8 Pages
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Fabricant  FAIRCHILD [Fairchild Semiconductor]
Site Internet  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FQA10N80C_F109 Datasheet(HTML) 3 Page - Fairchild Semiconductor

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FQA10N80C_F109 Rev. A
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs.
Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage
Variation vs. Source Current
and Temperatue
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
10
-1
10
0
10
1
10
-1
10
0
10
1
V
GS
Top:
15.0V
10.0V
8.0V
7.0V
6.5V
6.0V
Bottom: 5.5V
Notes :
1. 250µs PulseTest
2. T
C = 25℃
V
DS, Drain-Source Voltage [V]
246
8
10
10
-1
10
0
10
1
150
oC
25
oC
-55
oC
Notes :
1. V
DS = 50V
2. 250µs PulseTest
V
GS, Gate-Source Voltage [V]
0
5
10
15
20
25
30
0.5
1.0
1.5
2.0
2.5
V
GS = 20V
V
GS = 10V
Note: T
J = 25℃
I
D, Drain Current [A]
0.2
0.4
0.6
0.8
1.0
1.2
1.4
10
-1
10
0
10
1
150℃
Notes :
1. V
GS = 0V
2. 250µs PulseTest
25℃
V
SD, Source-Drain voltage [V]
0
10
203040
50
0
2
4
6
8
10
12
V
DS = 400V
V
DS = 160V
V
DS = 640V
Note : I
D = 10A
Q
G, Total Gate Charge [nC]
10
-1
10
0
10
1
0
500
1000
1500
2000
2500
3000
3500
C
iss = Cgs + Cgd (Cds = shorted)
C
oss = Cds + Cgd
C
rss = Cgd
Notes :
1. V
GS = 0 V
2. f =1MHz
C
rss
C
oss
C
iss
V
DS, Drain-Source Voltage [V]


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