FDD5810 datasheet(3/7 Pages) FAIRCHILD

No de pièce	FDD5810

Description	N-Channel Logic Level Trench짰 MOSFET

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Fabricant	FAIRCHILD [Fairchild Semiconductor]

Site Internet	http://www.fairchildsemi.com

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3 / 7 page

FDD5810 Rev. A (W)

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3

Switching Characteristics

Drain-Source Diode Characteristics

Notes:

1: Starting TJ = 25°C, L = 110μH, IAS = 28A, VDD = 54V, VGS = 10V.

ton

Turn-On Time

VDD = 30V, ID = 35A

VGS = 5V, RGS = 11Ω

-

130

ns

td(on)

Turn-On Delay Time

-

12

-

ns

tr

Rise Time

-

75

-

ns

td(off)

Turn-Off Delay Time

-

26

-

ns

tf

Fall Time

-

34

-

ns

toff

Turn-Off Time

-

90

ns

VSD

Source to Drain Diode Voltage

ISD = 32A

-

1.25

V

ISD = 16A

-

1.0

V

trr

Reverse Recovery Time

IF = 35A, di/dt = 100A/μs

-

39

ns

Qrr

Reverse Recovery Charge

IF = 35A, di/dt = 100A/μs

-

35

nC

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