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FQA13N50CF Datasheet(Fiches technique) 4 Page - Fairchild Semiconductor

Numéro de pièce FQA13N50CF
Description  500V N-Channel MOSFET
Télécharger  9 Pages
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Fabricant  FAIRCHILD [Fairchild Semiconductor]
Site Internet  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FQA13N50CF Datasheet(HTML) 4 Page - Fairchild Semiconductor

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FQA13N50CF Rev. A1
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
Figure 8. On-Resistance Variation
vs. Temperature
vs. Temperature
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 11. Transient Thermal Response Curve
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
Notes :
1. V
GS
= 0 V
2. I
D
= 250 µA
T
J
, Junction Temperature [°C]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Notes :
1. V
GS
= 10 V
2. I
D
= 7.5 A
T
J
, Junction Temperature [°C]
10
0
10
1
10
2
10
3
10
-1
10
0
10
1
10
2
100 ms
10 µs
DC
10 ms
1 ms
100 µs
Operation in This Area
is Limited by R
DS(on)
Notes :
1. T
C
= 25°C
2. T
J
= 150°C
3. Single Pulse
V
DS
, Drain-Source Voltage [V]
25
50
75
100
125
150
0
2
4
6
8
10
12
14
16
T
C
, Case Temperature [°C]
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
No t e s :
1 . Z
θ JC ( t ) = 0. 58 ° C/ W
M a x .
2 . D u ty F a c t o r , D = t
1
/t
2
3 . T
JM
- T
C
= P
DM
* Z
θ JC (t )
s ingle p u ls e
D= 0 . 5
0. 02
0. 2
0. 0 5
0. 1
0. 01
t
1
, S q uar e W a v e P u ls e D u r a t ion [ s e c ]
t1
PDM
t2


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