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2SA1381FSTU Fiches technique(PDF) 1 Page - Fairchild Semiconductor

No de pièce 2SA1381FSTU
Description  PNP Epitaxial Silicon Transistor
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Fabricant  FAIRCHILD [Fairchild Semiconductor]
Site Internet  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

2SA1381FSTU Fiches technique(HTML) 1 Page - Fairchild Semiconductor

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© 2008 Fairchild Semiconductor Corporation
www.fairchildsemi.com
2SA1381/KSA1381 Rev. A1
1
March 2008
2SA1381/KSA1381
PNP Epitaxial Silicon Transistor
Applications
• Audio, Voltage Amplifier and Current Source
• CRT Display, Video Output
• General Purpose Amplifier
Features
• High Voltage : VCEO= -300V
• Low Reverse Transfer Capacitance : Cre= 2.3pF at VCB = -30V
• Excellent Gain Linearity for low THD
• High Frequency: 150MHz
• Full thermal and electrical Spice models are available
• Complement to 2SC3503/KSC3503
Absolute Maximum Ratings* T
a = 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics* T
a=25°C unless otherwise noted
* Device mounted on minimum pad size
hFE Classification
Symbol
Parameter
Ratings
Units
BVCBO
Collector-Base Voltage
-300
V
BVCEO
Collector-Emitter Voltage
-300
V
BVEBO
Emitter-Base Voltage
-5
V
IC
Collector Current(DC)
-100
mA
ICP
Collector Current(Pulse)
-200
mA
PC
Total Device Dissipation, TC=25°C
TC=125°C
7
1.2
W
W
TJ, TSTG
Junction and Storage Temperature
- 55 ~ +150
°C
Symbol
Parameter
Max.
Units
RθJC
Thermal Resistance, Junction to Case
17.8
°C/W
Classification
CD
E
F
hFE
40 ~ 80
60 ~ 120
100 ~ 200
160 ~ 320
1
TO-126
1. Emitter
2.Collector
3.Base


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