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STP8NM60 Fiches technique(PDF) 2 Page - STMicroelectronics

No de pièce STP8NM60
Description  N-CHANNEL 600V - 0.9ohm - 8A TO-220/TO-220FP/DPAK/IPAK MDmesh??Power MOSFET
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP8NM60 Fiches technique(HTML) 2 Page - STMicroelectronics

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STP8NM60, STP8NM60FP, STD5NM60, STD5NM60-1
2/13
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
(1) ISD ≤5A, di/dt ≤400A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
Parameter
Value
Unit
STP8NM60
STP8NM60FP
STD5NM60
STD5NM60-1
VDS
Drain-source Voltage (VGS =0)
600
V
VDGR
Drain-gate Voltage (RGS =20kΩ)
600
V
VGS
Gate- source Voltage
± 30
V
ID
Drain Current (continuous) at TC = 25°C
8
8 (*)
5
A
ID
Drain Current (continuous) at TC = 100°C
5
5 (*)
3.1
A
IDM ( )
Drain Current (pulsed)
32
32 (*)
20
A
PTOT
Total Dissipation at TC = 25°C
100
30
96
W
Derating Factor
0.8
0.24
0.4
W/°C
dv/dt (1)
Peak Diode Recovery voltage slope
15
15
15
V/ns
VISO
Insulation Withstand Voltage (DC)
-
2500
-
V
Tj
Tstg
Operating Junction Temperature
Storage Temperature
-55 to 150
-55 to 150
°C
°C
TO-220
TO-220FP
DPAK
IPAK
Rthj-case
Thermal Resistance Junction-case Max
1.25
4.16
1.3
°C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
°C/W
Tl
Maximum Lead Temperature For Soldering Purpose
300
°C
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
2.5
A
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID =IAR,VDD =50 V)
200
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
600
V
IDSS
Zero Gate Voltage
Drain Current (VGS =0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
10
µA
µA
IGSS
Gate-body Leakage
Current (VDS =0)
VGS = ± 30V
±100
nA
VGS(th)
Gate Threshold Voltage
VDS =VGS,ID = 250µA
345
V
RDS(on)
Static Drain-source On
Resistance
VGS =10V, ID = 2.5 A
0.9
1


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