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FDN5632N_F085 Fiches technique(PDF) 2 Page - Fairchild Semiconductor |
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FDN5632N_F085 Fiches technique(HTML) 2 Page - Fairchild Semiconductor |
2 / 7 page FDN5632N_F085 Rev. A (W) www.fairchildsemi.com 2 MOSFET Maximum Ratings T A = 25°C unless otherwise noted Thermal Characteristics Symbol Parameter Ratings Units VDSS Drain to Source Voltage 60 V VGS Gate to Source Voltage ±20 V ID Drain Current Continuous (VGS = 10V) 1.7 A Pulsed 10 PD Power Dissipation 1.1 W TJ, TSTG Operating and Storage Temperature -55 to +150 oC RθJC Thermal Resistance Junction to Case 75 oC/W RθJA Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area 111 oC/W Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 5632 FDN5632N_F085 SSOT3 7” 8mm 3000 units Electrical Characteristics T A = 25°C unless otherwise noted Off Characteristics On Characteristics Dynamic Characteristics Symbol Parameter Test Conditions Min Typ Max Units BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 60 - - V IDSS Zero Gate Voltage Drain Current VDS = 48V, - - 1 µA VGS = 0V TA = 125 oC - - 250 IGSS Gate to Source Leakage Current VGS = ±20V - - ±100 nA VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA1 2.0 3 V rDS(on) Drain to Source On Resistance ID = 1.7A, VGS= 10V - 57 82 m Ω ID = 1.6A, VGS= 6V - 62 88 ID = 1.6A, VGS= 4.5V 70 98 ID = 1.7A, VGS= 10V, TA = 150 oC -107 135 Ciss Input Capacitance VDS = 15V, VGS = 0V, f = 1MHz - 475 - pF Coss Output Capacitance - 60 - pF Crss Reverse Transfer Capacitance - 30 - pF RG Gate Resistance f = 1MHz - 1.4 - Ω Qg(TOT) Total Gate Charge at 10V VGS = 0 to 10V VDD = 20V ID = 1.7A - 9.2 12 nC Qgs Gate to Source Gate Charge -1.5 - nC Qgd Gate to Drain “Miller“ Charge - 1.4 - nC |
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