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FDN5632N_F085 Fiches technique(PDF) 4 Page - Fairchild Semiconductor |
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FDN5632N_F085 Fiches technique(HTML) 4 Page - Fairchild Semiconductor |
4 / 7 page FDN5632N_F085 Rev. A (W) www.fairchildsemi.com 4 Typical Characteristics Figure 1. Normalized Power Dissipation vs Ambient Temperature 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 TA, AMBIENT TEMPERATURE(oC) Figure 2. Maximum Continuous Drain Current vs Ambient Temperature 25 50 75 100 125 150 0 1 2 3 RθJA = 111 o C/W VGS = 4.5V VGS = 10V TA, AMBIENT TEMPERATURE(oC) CURRENT LIMITED BY PACKAGE Figure 3. 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 4 0.01 0.1 1 SINGLE PULSE RθJA = 111 oC / W D = 0.50 0.20 0.10 0.05 0.02 0.01 t, RECTANGULAR PULSE DURATION(s) DUTY CYCLE - DESCENDING ORDER 2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA PDM t1 t2 Normalized Maximum Transient Thermal Impedance Figure 4. Peak Current Capability 10 -3 10 -2 10 -1 110 10 2 10 3 10 4 1 10 100 SINGLE PULSE RθJA = 111 oC / W V GS = 10V t, RECTANGULAR PULSE DURATION(s) TC = 25 oC I = I25 150 - TC 125 FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: |
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