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FDN5632N_F085 Fiches technique(PDF) 3 Page - Fairchild Semiconductor |
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FDN5632N_F085 Fiches technique(HTML) 3 Page - Fairchild Semiconductor |
3 / 7 page FDN5632N_F085 Rev. A (W) www.fairchildsemi.com 3 Electrical Characteristics T A = 25 oC unless otherwise noted Switching Characteristics Drain-Source Diode Characteristics Symbol Parameter Test Conditions Min Typ Max Units ton Turn-On Time VDD = 30V, ID = 1.0A VGS = 10V, RGEN = 6Ω - - 30 ns td(on) Turn-On Delay Time - 15 - ns tr Rise Time - 1.7 - ns td(off) Turn-Off Delay Time - 5.2 - ns tf Fall Time - 1.3 - ns toff Turn-Off Time - - 12.9 ns VSD Source to Drain Diode Voltage ISD = 1.7A - 0.8 1.25 V ISD = 0.85A - 0.8 1.0 trr Reverse Recovery Time ISD = 1.7A, dISD/dt = 100A/µs - 16.0 21 ns Qrr Reverse Recovery Charge - 7.9 10.3 nC This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. |
Numéro de pièce similaire - FDN5632N_F085 |
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