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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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FDZ1905PZ Fiches technique(PDF) 2 Page - Fairchild Semiconductor |
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FDZ1905PZ Fiches technique(HTML) 2 Page - Fairchild Semiconductor |
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2 / 6 page  FDZ1905PZ Rev.B www.fairchildsemi.com 2 Electrical Characteristics T J = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics IS1S2 Zero Gate Voltage Source1 to Source2 Current VS1S2 = –16V, VGS = 0V –1 µA IGSS Gate Body Leakage Current VGS = ±8V, VS1S2 = 0V ±10 uA On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VS1S2, IS1S2 = -250µA –0.4 –0.7 –1.0 V rS1S2(on) Static Source1 to Source2 On Resistance VGS = –4.5V, IS1S2 = –1A 99 126 m Ω VGS = –2.5V, IS1S2 = –1A 112 141 VGS = –1.8V, IS1S2 = –1A 132 198 VGS = –1.5V, IS1S2 = –1A 164 303 VGS = –4.5V, IS1S2 = –1A, TJ = 125°C 135 195 gFS Forward Transconductance VS1S2 = –5V, IS1S2 = –1A 8 S (Note 2) Switching Characteristics td(on) Turn-On Delay Time VS1S2 = –10V, IS1S2 = –1A VGS = –4.5V, RGEN = 6Ω 12 22 ns tr Rise Time 36 58 ns td(off) Turn-Off Delay Time 143 229 ns tf Fall Time 182 291 ns (Note 2) Notes: 1. RθJA is determined with the device mounted on a 1in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. 2. Pulse Test: Pulse Width < 300ms, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only protection against ESD. No gate overvoltage rating is implied. a. 83°C/W when mounted on a 1 in2 pad of 2 oz copper b.140°C/W when mounted on a minimum pad of 2 oz copper |
Numéro de pièce similaire - FDZ1905PZ |
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Description similaire - FDZ1905PZ |
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