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STP80NF55-06 Fiches technique(PDF) 1 Page - STMicroelectronics |
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STP80NF55-06 Fiches technique(HTML) 1 Page - STMicroelectronics |
1 / 6 page STP80NF55-06 STP80NF55-06FP N - CHANNEL 55V - 0.005 Ω - 80A TO-220/TO-220FP STripFET ™ POWER MOSFET PRELIMINARY DATA s TYPICAL RDS(on) = 0.005 Ω s EXCEPTIONAL dv/dt CAPABILITY s 100% AVALANCHE TESTED s APPLICATION ORIENTED CHARACTERIZATION DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique ”Single Feature Size ™ ” strip-based process. The resulting transi- stor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a re- markable manufacturing reproducibility. APPLICATIONS s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC CONVERTERS s AUTOMOTIVE ENVIRONMENT ® INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t STP80NF55-06 STP55NF 55-06FP VDS Drain-source Voltage (VGS =0) 55 V VDGR Drain- gate Voltage (RGS =20 k Ω) 55 V VGS G ate-source Volt age ± 20 V ID Drain Current (continuous) at Tc =25 oC80 60 A ID Drain Current (continuous) at Tc =100 oC57 42 A IDM ( •) Drain Current (pulsed) 320 240 A Ptot T otal Dissipat ion at Tc =25 oC210 50 W Derating Factor 1. 43 0.33 W/ oC VISO I nsulation W ithstand Voltage (DC) 2000 V dv/dt Peak Diode Recovery voltage slope 7 V/ns Tstg Storage Temperature -65 to 175 oC Tj Max. Operating Junction Temperature 175 oC ( •) Pulse width limited by safe operating area ( 1)ISD ≤ 80 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX TYPE VDSS RDS(on) ID STP80NF55-06 STP80NF55-06FP 55 V 55 V < 0.0065 Ω < 0.0065 Ω 80 A 60 A July 1999 TO-220 TO-220FP 1 2 3 1 2 3 1/6 |
Numéro de pièce similaire - STP80NF55-06 |
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Description similaire - STP80NF55-06 |
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