 |
Moteur de recherche de fiches techniques de composants électroniques |
|
|
Moteur de recherche de fiches techniques de composants électroniques |
|
IRF6619PBF Fiches technique(PDF) 2 Page - International Rectifier |
|
||||||||||||||||||||||||||||||
IRF6619PBF Fiches technique(HTML) 2 Page - International Rectifier |
|
|
2 / 10 page  IRF6619PbF 2 www.irf.com
Repetitive rating; pulse width limited by max. junction temperature. Pulse width ≤ 400µs; duty cycle ≤ 2%. Notes: Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 20 ––– ––– V ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 14 ––– mV/°C RDS(on) Static Drain-to-Source On-Resistance ––– 1.65 2.2 m Ω ––– 2.2 3.0 VGS(th) Gate Threshold Voltage 1.55 ––– 2.45 V ∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient ––– -5.8 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 µA ––– ––– 150 IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 89 ––– ––– S Qg Total Gate Charge ––– 38 57 Qgs1 Pre-Vth Gate-to-Source Charge ––– 10.2 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 3.5 ––– nC Qgd Gate-to-Drain Charge ––– 13.2 ––– Qgodr Gate Charge Overdrive ––– 11.1 ––– See Fig. 18 Qsw Switch Charge (Qgs2 + Qgd) ––– 16.7 ––– Qoss Output Charge ––– 22 ––– nC RG Gate Resistance ––– ––– 2.3 Ω td(on) Turn-On Delay Time ––– 21 ––– tr Rise Time ––– 71 ––– td(off) Turn-Off Delay Time ––– 25 ––– ns tf Fall Time ––– 9.3 ––– Ciss Input Capacitance ––– 5040 ––– Coss Output Capacitance ––– 1580 ––– pF Crss Reverse Transfer Capacitance ––– 780 ––– Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current @TC=25°C ––– ––– 110 (Body Diode) A ISM Pulsed Source Current ––– ––– 240 (Body Diode) g VSD Diode Forward Voltage ––– 0.8 1.0 V trr Reverse Recovery Time ––– 29 44 ns Qrr Reverse Recovery Charge ––– 18 27 nC VDS = 16V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS = 4.5V ID = 16A VGS = 0V VDS = 10V ID = 24A TJ = 25°C, IF = 24A di/dt = 100A/µs i TJ = 25°C, IS = 24A, VGS = 0V i showing the integral reverse p-n junction diode. Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 30A i VGS = 4.5V, ID = 24A i VDS = VGS, ID = 250µA VDS = 16V, VGS = 0V MOSFET symbol Clamped Inductive Load VDS = 10V, ID = 24A Conditions ƒ = 1.0MHz VDS = 10V, VGS = 0V VDD = 16V, VGS = 4.5V i VDS = 10V |
Numéro de pièce similaire - IRF6619PBF |
|
Description similaire - IRF6619PBF |
|
|
|
Lien URL |
| Politique de confidentialité |
| ALLDATASHEET.FR |
| ALLDATASHEET vous a-t-il été utile ? [ DONATE ] |
À propos de Alldatasheet | Publicité | Contactez-nous | Politique de confidentialité | Echange de liens | Fabricants All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
French ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
