STP5NB90 datasheet(3/6 Pages) STMICROELECTRONICS

No de pièce	STP5NB90

Description	N - CHANNEL 900V - 2.3 ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET

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Fabricant	STMICROELECTRONICS [STMicroelectronics]

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3 / 6 page

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbo l

Parameter

Test Con ditions

Min.

T yp.

Max.

Unit

td(on)

tr

Turn-on Time

Rise Time

VDD = 450 V

ID =2.5 A

RG =4.7

Ω

VGS =10 V

18

9

26

13

ns

Qg

Q gs

Qgd

Tot al Gate Charge

Gat e-Source Charge

Gat e-Drain Charge

VDD =720 V

ID =5 A VGS =10 V

33

10

13

47

nC

SWITCHING OFF

Symbo l

Parameter

Test Con ditions

Min.

T yp.

Max.

Unit

tr(Voff)

tf

tc

Off -volt age Rise Time

Fall Time

Cross-over Time

VDD = 720 V

ID =5 A

RG =4.7

Ω VGS =10 V

13

10

17

18

14

24

ns

SOURCE DRAIN DIODE

Symbo l

Parameter

Test Con ditions

Min.

T yp.

Max.

Unit

ISD

ISDM (

•)

Source-drain Current

(pulsed)

5

20

A

VSD (

∗)

Forward On Volt age

ISD =5 A

VGS =0

1. 6

V

trr

Qrr

IRRM

Reverse Recovery

Time

Reverse Recovery

Charge

Reverse Recovery

Current

ISD = 5 A

di/dt = 100 A/

µs

VDD = 100 V

Tj =150

oC

700

5.4

16

ns

µC

A

(

∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

(

•) Pulse width limited by safe operating area

STP5NB90/FP

3/6

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Fabricant	No de pièce	Fiches technique	Description
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