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SI4670DY_RC Fiches technique(PDF) 1 Page - Vishay Siliconix |
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SI4670DY_RC Fiches technique(HTML) 1 Page - Vishay Siliconix |
1 / 4 page Vishay Siliconix Si4670DY_RC Document Number: 69737 Revision: 02-Oct-07 www.vishay.com 1 R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1]. When implemented in P-Spice, these values have matching characteristic curves to the Single Pulse Transient Thermal Impedance curves for the MOSFET. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. Note: For a detailed explanation of implementing these values in P-SPICE, refer to Application Note AN609 Thermal Simulations Of Power MOSFETs on P-SPICE Platform. R-C THERMAL MODEL FOR TANK CONFIGURATION This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits. R-C VALUES FOR TANK CONFIGURATION Thermal Resistance (°C/W) Junction to Ambient Ch1 Ambient Ch2 Case Foot Ch1 Foot Ch2 RT1 6.9442 6.9442 N/A 11.6583 11.6583 RT2 30.0404 30.0404 N/A 3.6731 3.6731 RT3 25.8463 25.8463 N/A 8.9996 8.9996 RT4 47.1691 46.1691 N/A 19.6690 19.6690 Thermal Capacitance (Joules/°C) Junction to Ambient Ch1 Ambient Ch2 Case Foot Ch1 Foot Ch2 CT1 386.3454 u 386.3454 u N/A 2.2210 m 2.2210 m CT2 57.6804 m 57.6804 m N/A 170.7109 u 170.7109 u CT3 6.9241 m 6.9241 m N/A 180.0765 m 180.0765 m CT4 1.1640 1.1640 N/A 11.0677 m 11.0677 m |
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