STP55NE06LFP datasheet(2/6 Pages) STMICROELECTRONICS

No de pièce	STP55NE06LFP

Description	N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET

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THERMAL DATA

T O-220

T O-220F P

Rthj-ca se

Thermal Resist ance Junction-case

Max

1. 15

4.28

oC/W

Rthj- amb

Rthc- si nk

Tl

Thermal Resist ance Junction-ambient

Max

Thermal Resist ance Case-sink

Typ

Maximum Lead Temperature For Soldering Purpose

62.5

0.5

300

oC/W

oC

AVALANCHE CHARACTERISTICS

Symb ol

Parameter

Max Valu e

Uni t

IAR

Avalanche Current, Repetitive or Not -Repetitive

(pulse width limited by Tj max,

δ <1%)

55

A

EAS

Single Pulse Avalanche Energy

(starting Tj =25

oC, ID =IAR,VDD =25 V)

250

mJ

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

OFF

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

V(BR)DSS

Drain-source

Breakdown Volt age

ID = 250

µAVGS =0

60

V

IDSS

Zero Gat e Voltage

Drain Current (VGS =0)

VDS =Max Rating

VDS = Max Rating

Tc =125

oC

1

10

µA

IGSS

Gate-body Leakage

Current (VDS =0)

VGS =

± 15 V

± 100

nA

ON (

∗)

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

VGS(th)

Gate T hreshold Voltage VDS =VGS

ID =250

µA

11.7

2.5

V

RDS(on)

St atic Drain-source O n

Resistance

VGS =5 V

ID =27.5 A

VGS =10 V

ID =27.5 A

0.022

0.019

0. 028

0. 022

Ω

ID(o n)

On Stat e Drain Current

VDS >ID(on) xRDS(on) max

VGS =10 V

55

A

DYNAMIC

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

gfs (

∗)Forward

Transconductance

VDS >ID(on) xRDS(on) max

ID =27.5 A

20

30

S

Ciss

Coss

Crss

Input Capacitance

Output Capacit ance

Reverse Transfer

Capacitance

VDS = 25V

f = 1MHz

VGS = 0

2800

375

100

3750

500

140

pF

STP55NE06LFP

2/6

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