STESB01STR datasheet(1/14 Pages) STMICROELECTRONICS

No de pièce	STESB01STR

Description	ESBT Base Driver

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Fabricant	STMICROELECTRONICS [STMicroelectronics]

Site Internet	http://www.st.com

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October 2006

Rev. 3

1/14

14

STESB01

ESBT Base Driver

Feature summary

■ Controls ESBT base current in every line/load

condition

■ Supply voltage range: 8V to 20 V

■ Storage time controlled by closed loop

architecture (from 150ns to 1.5µs)

■ Under voltage lockout with hysteresis

Description

The STESB01 is a dedicated base current biasing

transistor for the Emitter-Switched Bipolar

Transistor (ESBT) family of power switches. The

device is able to control the ESBT storage time

(from 150ns to 1.5ìs) using closed loop

architecture. This guarantees proper operation of

the ESBT in every line and load condition,

avoiding oversaturation of the device and, at the

same time, ensuring the correct base current

when a higher load is required. The storage time

can be adjusted with an external resistor, which

allows maximum flexibility in different applications.

The optimization of the base current value also

reduces the base current losses to minimum level.

SOT23-6L

SO-8

www.st.com

Order code

Part number

Package

Packaging

STESB01STR

SOT23-6L

3000 Parts per Reel

STESB01DR

SO-8

2500 Parts per Reel

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