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74V1T00STR Fiches technique(PDF) 3 Page - STMicroelectronics

No de pièce 74V1T00STR
Description  SINGLE 2-INPUT NAND GATE
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

74V1T00STR Fiches technique(HTML) 3 Page - STMicroelectronics

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DC SPECIFICATIONS
AC ELECTRICAL CHARACTERISTICS (Input tr =tf =3ns)
(*) Voltage range is 5.0V
± 0.5V
CAPACITIVE CHARACTERISTICS
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) =CPD xVCC xfIN +ICC
Symbol
Parameter
Test Condition
Value
Unit
VCC
(V)
TA = 25°C
-40 to 85°C
-55 to 125°C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
VIH
High Level Input
Voltage
4.5 to
5.5
22
2
V
VIL
Low Level Input
Voltage
4.5 to
5.5
0.8
0.8
0.8
V
VOH
High Level Output
Voltage
4.5
IO=-50 µA
4.4
4.5
4.4
4.4
V
4.5
IO=-8 mA
3.94
3.8
3.7
VOL
Low Level Output
Voltage
4.5
IO=50 µA
0.0
0.1
0.1
0.1
V
4.5
IO=8 mA
0.36
0.44
0.55
II
Input Leakage
Current
0to
5.5
VI =5.5Vor GND
± 0.1
± 1.0
± 1.0
µA
ICC
Quiescent Supply
Current
5.5
VI =VCC or GND
110
20
µA
+ICC
Additional Worst
Case Supply
Current
5.5
One Input at 3.4V,
other input at VCC
or GND
1.35
1.5
1.5
mA
Symbol
Parameter
Test Condition
Value
Unit
VCC
(V)
CL
(pF)
TA = 25°C
-40 to 85°C
-55 to 125°C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
tPLH
tPHL
Propagation Delay
Time
5.0 (*)
15
5.0
7.0
1.0
8.0
1.0
9.0
ns
5.0 (*)
50
5.5
8.0
1.0
9.0
1.0
10.0
Symbol
Parameter
Test Condition
Value
Unit
TA = 25°C
-40 to 85°C
-55 to 125°C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
CIN
Input Capacitance
410
10
10
pF
CPD
Power Dissipation
Capacitance
(note 1)
13
pF


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