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STN3NF06 Fiches technique(PDF) 2 Page - STMicroelectronics

No de pièce STN3NF06
Description  N-CHANNEL 60V - 0.07ohm - 4A SOT-223 STripFET™ II POWER MOSFET
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STN3NF06 Fiches technique(HTML) 2 Page - STMicroelectronics

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Note: 1. THERMAL DATA
(*) When Mounted on FR-4 board with 1 inch2 pad, 2 oz of Cu and t
[ 10 sec
(**) When Mounted on minimum recommended footprint
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)
OFF
ON (1)
DYNAMIC
Rthj-pcb
Rthj-pcb
Tl
Thermal Resistance Junction-PCB (*)
Thermal Resistance Junction-PCB (**)
Maximum Lead Temperature For Soldering Purpose
(for 10 sec. 1.6 mm from case)
Max
Max
Typ
38
100
260
°C/W
°C/W
°C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
60
V
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating TC = 125°C
1
10
µA
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
±100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGS(th)
Gate Threshold Voltage
VDS = VGS
ID = 250 µA
23
4
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10 V
ID = 1.5 A
0.07
0.10
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (*)
Forward Transconductance
VDS = 15 V
ID = 1.5A
3S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25V, f = 1 MHz, VGS = 0
315
70
30
pF
pF
pF


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